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Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction prof les in semiconductors with the sample quality suff cient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (>1 µm).
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참고문헌 (14)
참고문헌 신청
Abrahams M S / 1974 / Cross-sectional specimens for transmission electron microscopy / J. Appl. Phys 45 : 3315 ~
Barna A / 1999 / TEM sample preparation by ion milling/ amorphization / Micron 30 : 267 ~ 276
Chew N G / 1987 / The preparation of transmission electron microscope specimens from compound semiconductors by ion milling / Ultramicroscopy 23 : 175 ~ 198
Formanek P / 2006 / Specimen preparation for electron holography of semiconductor devices / Ultramicroscopy 106 : 365 ~ 375
Giannuzzi L A / 1999 / A review of focused ion beam milling techniques for TEM specimen preparation / Micron 30 : 197 ~ 204
Barna A / 1999 / TEM sample preparation by ion milling/ amorphization / Micron 30 : 267 ~ 276
Chew N G / 1987 / The preparation of transmission electron microscope specimens from compound semiconductors by ion milling / Ultramicroscopy 23 : 175 ~ 198
Formanek P / 2006 / Specimen preparation for electron holography of semiconductor devices / Ultramicroscopy 106 : 365 ~ 375
Giannuzzi L A / 1999 / A review of focused ion beam milling techniques for TEM specimen preparation / Micron 30 : 197 ~ 204
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