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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.33 No.4
- 발행연도
- 2024.7
- 수록면
- 96 - 99 (4page)
이용수
초록· 키워드
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We report on the structural, optical, and electrical characteristics of metastable 𝜅-Ga₂O₃ epitaxially grown on a 𝑐-plane sapphire substrate by a metal organic chemical vapor deposition system using H₂O as an oxygen precursor. The effects of key epitaxial growth parameters such as group III molar flow rate, H₂O vapor flow rate, and types of carrier gas were systematically studied by x-ray diffraction, atomic force microscopy, and photoluminescence measurements. The group III molar flow rate was shown to strongly affect the growth rate and root mean square roughness. On the other hand, the H₂O flow rate was found to be a critical factor for uniform surface coverage. Furthermore, we show that growth using N₂ as a carrier gas, instead of conventional H2 carrier gas, can lead to higher Hall electron mobility, which was measured after post-growth annealing.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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